Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US17588967Application Date: 2022-01-31
-
Publication No.: US12087739B2Publication Date: 2024-09-10
- Inventor: Toshiya Tadakuma , Shin Suzuki
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP 21117289 2021.07.15
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/00 ; H01L25/07 ; H01L25/18 ; H02P27/06

Abstract:
A semiconductor device includes: a semiconductor module including a switching device, a first wiring connected to the switching device, a second wiring positioned adjacent to the first wiring and generating induced electromotive force according to a change in an electric current flowing in the first wiring, and a sealing material sealing the switching device, the first wiring and the second wiring, wherein both of one end and the other end of the second wiring are exposed from the sealing material; a substrate including a GND electrode connected to the one end and on which the semiconductor module is mounted; and a diode rectifying the induced electromotive force output from the other end.
Public/Granted literature
- US20230017535A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-01-19
Information query
IPC分类: