Invention Grant
- Patent Title: Microelectronic assemblies having an integrated capacitor
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Application No.: US18128952Application Date: 2023-03-30
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Publication No.: US12087746B2Publication Date: 2024-09-10
- Inventor: Chong Zhang , Cheng Xu , Junnan Zhao , Ying Wang , Meizi Jiao
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/56 ; H01L23/498 ; H01L23/528 ; H01L23/538 ; H01L25/16 ; H01L49/02

Abstract:
Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a die having a first surface and an opposing second surface; a capacitor having a surface, wherein the surface of the capacitor is coupled to the first surface of the die; and a conductive pillar coupled to the first surface of the die. In some embodiments, a microelectronic assembly may include a capacitor in a first dielectric layer; a conductive pillar in the first dielectric layer; a first die having a surface in the first dielectric layer; and a second die having a surface in a second dielectric layer, wherein the second dielectric layer is on the first dielectric layer, and wherein the surface of the second die is coupled to the capacitor, to the surface of the first die, and to the conductive pillar.
Public/Granted literature
- US20230238368A1 MICROELECTRONIC ASSEMBLIES HAVING AN INTEGRATED CAPACITOR Public/Granted day:2023-07-27
Information query
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