Invention Grant
- Patent Title: Solid-state imaging device and electronic apparatus
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Application No.: US17608962Application Date: 2020-04-06
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Publication No.: US12087795B2Publication Date: 2024-09-10
- Inventor: Hideto Hashiguchi
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: CHIP LAW GROUP
- Priority: JP 19094699 2019.05.20
- International Application: PCT/JP2020/015447 2020.04.06
- International Announcement: WO2020/235234A 2020.11.26
- Date entered country: 2021-11-04
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/768 ; H01L23/00

Abstract:
A solid-state imaging device is provided that includes a first substrate including at least a first electrode, a first modification layer, a first low-permittivity layer formed on the first modification layer, and a first joint surface where the first electrode and the first modification layer are exposed; and a second substrate including at least a second electrode, a second modification layer, a second low-permittivity layer formed on the second modification layer, and a second joint surface where the second electrode and the second modification layer are exposed. The first modification layer has higher hydrophilicity than the first low-permittivity layer. The second modification layer has higher hydrophilicity than the second low-permittivity layer. The first substrate and the second substrate form a laminate structure and are electrically connected by bonding the first joint surface and the second joint surface.
Public/Granted literature
- US20220216246A1 SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS Public/Granted day:2022-07-07
Information query
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