Provided is a semiconductor device including: a semiconductor substrate having upper and lower surfaces and throughout which a first-conductivity-type bulk donor is distributed; a first-conductivity-type high concentration region including a center position in a depth direction of the substrate and having a donor concentration higher than a doping concentration of the donors; and an upper surface side oxygen reduction region provided in contact with the upper surface inside the substrate and in which an oxygen chemical concentration decreases as approaching the upper surface. The oxygen chemical concentration distribution may have a maximum value region where the oxygen chemical concentration is 50% or more of the maximum value, a first peak of an impurity chemical concentration may be arranged in an end of the high concentration region in the depth direction, and the peak may be arranged on the upper surface side with respect to or in the maximum value region.