Invention Grant
- Patent Title: Semiconductor device and semiconductor circuit
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Application No.: US17473588Application Date: 2021-09-13
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Publication No.: US12087850B2Publication Date: 2024-09-10
- Inventor: Norio Yasuhara , Yoko Iwakaji , Yusuke Kawaguchi , Daiki Yoshikawa , Kenichi Matsushita , Shoko Hanagata , Tomoko Matsudai , Hiroko Itokazu , Keiko Kawamura
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: JP 21046674 2021.03.19
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/40 ; H01L29/417 ; H01L29/423 ; H03K17/567
Abstract:
This semiconductor device includes: a semiconductor layer having a first face and a second face, the semiconductor layer including a first trench and a second trench in a first face side; a first gate electrode in the first trench; a first conductive layer in the first trench and between the first gate electrode and the second face, the first conductive layer being electrically separated from the first gate electrode; a second gate electrode in the second trench; a second conductive layer in the second trench and between the second gate electrode and the second face; a first electrode on a the first face side; a second electrode on a side of the second face; a first gate electrode pad being electrically connected to the first gate electrode; and a second gate electrode pad being electrically connected to the second gate electrode.
Public/Granted literature
- US20220302288A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR CIRCUIT Public/Granted day:2022-09-22
Information query
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