Invention Grant
- Patent Title: Electrostatic discharge protection circuit for chip
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Application No.: US17810682Application Date: 2022-07-05
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Publication No.: US12088091B2Publication Date: 2024-09-10
- Inventor: Ling Zhu , Kai Tian
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN 2110783134.5 2021.07.12
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H02H1/00

Abstract:
The present disclosure provides an electrostatic discharge (ESD) protection circuit for a chip, including: a monitoring unit, configured to generate a trigger signal when there is an ESD pulse on a power supply pad; a plurality of controllable drive units, connected to the monitoring unit, and each of the controllable drive units being configured to switch an operating state under a control of a control signal, wherein the operating state includes an output state, and the output state refers to generating a drive signal according to the trigger signal; and a discharge transistor, connected to the plurality of controllable drive units, and configured to be turned on under a drive of the drive signal so as to discharge an electrostatic charge to the ground pad.
Public/Granted literature
- US20230007947A1 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT FOR CHIP Public/Granted day:2023-01-12
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