Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17369399Application Date: 2021-07-07
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Publication No.: US12088265B2Publication Date: 2024-09-10
- Inventor: Yohei Yasuda
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP 20209081 2020.12.17
- Main IPC: H03F3/45
- IPC: H03F3/45

Abstract:
A semiconductor device having a first differential amplification circuit is disclosed. The first differential amplification circuit includes a first input transistor having a gate configured to receive a first signal, a second input transistor having a gate configured to receive a second signal, a first current source connected to a source of the first input transistor and a source of the second input transistor, a first transistor that is connected in parallel to the source of the first input transistor and the source of the second input transistor and has a gate configured to receive the first signal, and a second transistor that is connected in series to the first transistor and has a gate configured to receive a control signal.
Public/Granted literature
- US20220200552A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-06-23
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