A preparation method of a semiconductor structure includes: providing a base; forming several bit lines arranged in parallel and at intervals on the base, which extend in a first direction; forming capacitor contact material layers between adjacent bit lines, upper surfaces of which are lower than upper surfaces of the bit lines; forming filling medium layers on the capacitor contact material layers; forming several first mask patterns arranged in parallel and at intervals on the filling medium layers and the bit lines, which extend in a second direction that intersects with the first direction; patterning the filling medium layers based on the first mask patterns to form several grooves in the filling medium layers; forming second mask patterns in the grooves; and patterning the capacitor contact material layers based on the second mask patterns to form several cylindrical capacitor contact structures arranged in parallel and at intervals.