Invention Grant
- Patent Title: Semiconductor memory
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Application No.: US18339526Application Date: 2023-06-22
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Publication No.: US12089409B2Publication Date: 2024-09-10
- Inventor: Masayoshi Tagami , Jun Iijima , Ryota Katsumata , Kazuyuki Higashi
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KIOXIA CORPORATION
- Current Assignee: KIOXIA CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP 17179348 2017.09.19
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/00 ; H01L25/065 ; H10B43/10 ; H10B43/27 ; H10B43/35 ; H10B43/40 ; G11C5/02 ; G11C16/04 ; G11C16/26

Abstract:
According to one embodiment, a semiconductor memory device includes a first memory chip, a circuit chip, and an external connection electrode on a surface of the first memory chip. The first memory chip comprises first conductors stacked via an insulator, and a first pillar passing the first conductors. The circuit chip comprises a substrate, a control circuit, and a second conductor connected to the control circuit, the circuit chip being attached to the first memory chip. The external connection electrode comprises a portion extending from a side of the surface of the first memory chip through the first memory chip and connected to the second conductor. Part of the first conductors is between the external connection electrode and the substrate.
Public/Granted literature
- US20230345726A1 SEMICONDUCTOR MEMORY Public/Granted day:2023-10-26
Information query
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