Invention Grant
- Patent Title: Peripheral circuit having recess gate transistors and method for forming the same
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Application No.: US17510752Application Date: 2021-10-26
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Publication No.: US12089413B2Publication Date: 2024-09-10
- Inventor: Yanwei Shi , Yanhong Wang , Cheng Gan , Liang Chen , Wei Liu , Zhiliang Xia , Wenxi Zhou , Kun Zhang , Yuancheng Yang
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: BAYES PLLC
- Main IPC: H10B43/40
- IPC: H10B43/40 ; G11C16/04 ; G11C16/24 ; H01L23/00 ; H01L25/00 ; H01L25/065 ; H01L25/18 ; H10B41/41
Abstract:
In certain aspects, a memory device includes an array of memory cells and a plurality of peripheral circuits coupled to the array of memory cells. The peripheral circuits include a first peripheral circuit including a recess gate transistor. The peripheral circuits also include a second peripheral circuit including a flat gate transistor.
Public/Granted literature
- US20230005946A1 PERIPHERAL CIRCUIT HAVING RECESS GATE TRANSISTORS AND METHOD FOR FORMING THE SAME Public/Granted day:2023-01-05
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