Invention Grant
- Patent Title: Methods for forming extreme ultraviolet mask comprising magnetic material
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Application No.: US17347322Application Date: 2021-06-14
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Publication No.: US12092952B2Publication Date: 2024-09-17
- Inventor: Kevin Tanady , Pei-Cheng Hsu , Ta-Cheng Lien , Tzu-Yi Wang , Hsin-Chang Lee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Seed IP Law Group LLP
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/54 ; H01L21/033

Abstract:
An extreme ultraviolet mask includes a substrate, a reflective multilayer stack over the substrate, a capping layer over the reflective multilayer stack, a patterned absorber layer over a first portion of the capping layer, and a magnetic layer over a second portion of the capping layer around the first portion.
Public/Granted literature
- US20220121101A1 ABSORBER MATERIALS FOR EXTREME ULTRAVIOLET MASK Public/Granted day:2022-04-21
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