Patterning of nanostructures using imprint lithography

Invention Grant

US12092953B2 Patterning of nanostructures using imprint lithography 有权

Patent Title: Patterning of nanostructures using imprint lithography
Application No.: US16315442

Application Date: 2017-06-26
Publication No.: US12092953B2

Publication Date: 2024-09-17
Inventor: James J. Watkins , Rohit Kothari
Applicant: University of Massachusetts
Applicant Address: US MA Boston
Assignee: University of Massachusetts
Current Assignee: University of Massachusetts
Current Assignee Address: US MA Boston
Agency: Schwegman Lundberg & Woessner, P.A.
International Application: PCT/US2017/039294 2017.06.26
International Announcement: WO2018/009363A 2018.01.11
Date entered country: 2019-01-04
Main IPC: G03F7/00
IPC: G03F7/00 ; B29C71/02 ; B32B3/10 ; B32B5/16 ; B32B5/30 ; C09D11/033 ; C09D11/037 ; C09D11/52 ; C23C18/06 ; C23C18/12 ; G03F1/00 ; H01L21/02

Abstract:

Various embodiments disclosed relate to methods of manufacturing a textured surface comprising disposing a nanoparticulate ink on a substrate.

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IPC分类:

G	物理
G03	摄影术；电影术；利用了光波以外其他波的类似技术；电记录术；全息摄影术
G03F	图纹面的照相制版工艺，例如，印刷工艺、半导体器件的加工工艺；其所用材料；其所用原版；其所用专用设备（照相排版装置入B41B；为摄影用的感光材料或处理入G03C；电记录、感光层或处理入G03G）
G03F7/00	图纹面，例如，印刷表面的照相制版如光刻工艺；图纹面照相制版用的材料，如：含光致抗蚀剂的材料；图纹面照相制版的专用设备（用于特殊工艺的光致抗蚀剂结构见相关的位置，例如，B44C，H01L，例如，H01L21/00，H05K）