A data read/write method and device, as well as a dynamic random-access memory (DRAM) having the same are disclosed. The method may include: entering a page read/write mode configured by a reserved bit in a mode register of the DRAM; receiving a page read/write command including a page read/write enable command configured by a reserved bit in a read/write command of the DRAM; and performing a page read/write operation according to the page read/write command. This method may allow a greater amount of data to be handled by each read/write command, thereby reducing the number of required read/write commands. As a result, a higher read/write rate and lower power consumption can be achieved.