An apparatus includes a memory array. The array in turn includes a plurality of word lines, a plurality of bit line pairs intersecting the plurality of word lines at a plurality of cell locations, and a plurality of memory cells, coupled to the plurality of word lines and the plurality of bit line pairs, and located at the plurality of cell locations. A plurality of word line drivers are coupled to the plurality of word lines, a dynamic voltage boost is coupled to the memory array, and a controller is coupled to the plurality of word line drivers and the dynamic voltage boost. The controller is configured to cause the dynamic voltage boost to boost the cells during a multiply accumulate operation.