Invention Grant
- Patent Title: Memory device and computing method thereof
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Application No.: US17817701Application Date: 2022-08-05
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Publication No.: US12094564B2Publication Date: 2024-09-17
- Inventor: Yun-Yuan Wang , Cheng-Hsien Lu , Dai-Ying Lee , Ming-Hsiu Lee , Feng-Min Lee
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
The application provides a memory device and an operation method thereof. The memory device includes: a memory array, for processing model computation having a plurality of input values and a plurality of interact coefficients; and at least one calculation unit. In receiving the input values, a first part and a second part of the memory cells generate a first part and a second part of the common source currents, respectively. The first part of the memory cells is electrically isolated from the second part of the memory cells based on a diagonal of the memory array. The at least one calculation unit calculates a first part and a second part of a local field energy of the model computation based on the first part and the second part of the common source currents.
Public/Granted literature
- US20240046970A1 MEMORY DEVICE AND COMPUTING METHOD THEREOF Public/Granted day:2024-02-08
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