A photodetector structure includes a readout integrated circuit (ROIC) substrate and a dielectric layer overlaying the IC substrate. The dielectric layer defines a plurality of recesses formed in a top surface of the dielectric layer where each recess has at least one sidewall that extends from a top surface of the dielectric layer to a bottom portion of each respective recess. A capacitor structure forms a portion of the photodetector structure and includes a first electrode formed across the top surface of the dielectric layer and across the at least one sidewall of each recess of the plurality of recesses. A capacitor dielectric layer is formed across the first electrode and a second electrode is formed across the capacitor dielectric layer. A detector overlays the capacitor structure.