In an embodiment a method for structuring a semiconductor surface includes providing the semiconductor surface, wherein the semiconductor surface is part of a GaN-semiconductor layer, irradiating the semiconductor surface with an electron beam in order to produce an irradiated section and anisotropic wet-chemical etching of the semiconductor surface, wherein an etching rate in the irradiated section is less than that in an unirradiated section of the semiconductor surface, and wherein no etching mask is applied to the semiconductor surface before anisotropic wet-chemical etching.