A method for manufacturing a display substrate is provided. The method includes: forming a first active layer arranged in the NMOS transistor region and a second active layer arranged in the PMOS transistor region on the base substrate; coating one side, facing away from the base substrate, of the first active layer and one side, facing away from the base substrate, of the second active layer with a first photoresist layer, forming a first pattern layer by patterning the first photoresist layer to expose at least two ends of the first active layer; forming N-type heavily doped regions by performing N-type heavy doping on the two ends of the first active layer with the first pattern layer as a mask; forming a second pattern layer by processing the first pattern layer to expose at least a middle region of the first active layer.