Invention Grant
- Patent Title: Semiconductor device and method for manufacturing same
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Application No.: US17461825Application Date: 2021-08-30
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Publication No.: US12094968B2Publication Date: 2024-09-17
- Inventor: Hiroaki Katou , Saya Shimomura , Shotaro Baba , Atsuro Inada , Hiroshi Yoshida , Yasuhiro Kawai
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP 21035045 2021.03.05
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/40 ; H01L29/423 ; H01L29/66
Abstract:
A semiconductor device includes a semiconductor part, first to third electrodes, and a control electrode. The first electrode is provided on a back surface of the semiconductor part. The second electrode is provided at a front surface side of the semiconductor part. The third electrode and the control electrode are provided inside a trench of the semiconductor part. The control electrode includes first and second control portions. The semiconductor device further includes first to third insulating films. The first insulating film is between the control electrode and the semiconductor part. The second insulating film covers the first and second control portions. The third insulating film is between the second electrode and the second insulating film. The third insulating film includes a portion extending between the first and second control portions. The third electrode is between the first electrode and the extension portion of the third insulating film.
Public/Granted literature
- US20220285548A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2022-09-08
Information query
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