- Patent Title: Point source light-emitting diode and method of producing the same
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Application No.: US17754266Application Date: 2020-10-01
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Publication No.: US12095004B2Publication Date: 2024-09-17
- Inventor: Masatoshi Iwata , Naruki Shindo
- Applicant: DOWA Electronics Materials Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: DOWA Electronics Materials Co., Ltd.
- Current Assignee: DOWA Electronics Materials Co., Ltd.
- Current Assignee Address: JP Chiyoda-ku
- Agency: KENJA IP LAW PC
- Priority: JP 19182352 2019.10.02
- International Application: PCT/JP2020/037477 2020.10.01
- International Announcement: WO2021/066116A 2021.04.08
- Date entered country: 2022-03-29
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/14 ; H01L33/38

Abstract:
The point source light-emitting diode includes a substrate; an n-type cladding layer; a light emitting layer; a p-type cladding layer; an n-type current confinement layer; a p-type contact layer provided on the n-type current confinement layer; and a p-type electrode having a light emission window concentric with the opening. The window opening width of the light emission window is equal to or larger than an opening width of the opening. The point source light-emitting diode has a hydrogen ion implanted area extending from the p-type contact layer to the light emitting layer in the thickness direction. The light emitting layer has a non-implanted region that has a region width larger than the opening width of the light emission window and is concentric with the light emission window, and a hydrogen ion implanted region enclosing the non-implanted region.
Public/Granted literature
- US20220328717A1 POINT SOURCE LIGHT-EMITTING DIODE AND METHOD OF PRODUCING THE SAME Public/Granted day:2022-10-13
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