Invention Grant
- Patent Title: Three-dimensional memory device with multiple types of support pillar structures and method of forming the same
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Application No.: US17244311Application Date: 2021-04-29
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Publication No.: US12096632B2Publication Date: 2024-09-17
- Inventor: Koichi Matsuno , Johann Alsmeier
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: THE MARBURY LAW GROUP PLLC
- Main IPC: H10B43/27
- IPC: H10B43/27 ; H10B41/10 ; H10B41/27 ; H10B41/35 ; H10B43/10 ; H10B43/35

Abstract:
Two types of support pillar structures are formed in a staircase region of an alternating stack of insulating layers and sacrificial material layers. First-type support pillar structures are formed in areas distal from backside trenches to be subsequently formed, and second-type support pillar structures may be formed in areas proximal to the backside trenches. The second-type support pillar structures may be formed as dielectric support pillar structures, or may be formed with at least one additional dielectric spacer.
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