Invention Grant
- Patent Title: Method for manufacturing honeycomb structure containing silicon carbide
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Application No.: US17182354Application Date: 2021-02-23
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Publication No.: US12103856B2Publication Date: 2024-10-01
- Inventor: Taku Nishigaki , Suguru Kodama , Keisuke Kimura
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Nagoya
- Assignee: NGK INSULATORS, LTD.
- Current Assignee: NGK INSULATORS, LTD.
- Current Assignee Address: JP Nagoya
- Agency: BURR PATENT LAW, PLLC
- Priority: JP 20054897 2020.03.25
- Main IPC: C01B32/963
- IPC: C01B32/963 ; B01J27/224 ; B01J35/40 ; B01J35/56 ; B01J37/04

Abstract:
A method for manufacturing a honeycomb structure containing silicon carbide, including blending a recycled raw material derived from a material constituting a first honeycomb structure containing silicon carbide in a process after firing as a part of an initial raw material for a second honeycomb structure containing silicon carbide, wherein the initial raw material comprises silicon carbide and metallic silicon; and the recycled raw material is a powder recovered from the material constituting the first honeycomb structure containing silicon carbide in the process after firing, and after the recovering, a particle size is adjusted so that a 10% diameter (D10) is 10 μm or more and a 50% diameter (D50) is 35 μm or less when a cumulative particle size distribution on a volume basis is measured by a laser diffraction/scattering method.
Public/Granted literature
- US20210300767A1 METHOD FOR MANUFACTURING HONEYCOMB STRUCTURE CONTAINING SILICON CARBIDE Public/Granted day:2021-09-30
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