Invention Grant
- Patent Title: Electronic device and method for accelerating memory access
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Application No.: US18047791Application Date: 2022-10-19
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Publication No.: US12105633B2Publication Date: 2024-10-01
- Inventor: Qunyi Yang , Yang Jiao , Jin Xiang , Tingli Cui , Xinglin Gui
- Applicant: Shanghai Zhaoxin Semiconductor Co., Ltd.
- Applicant Address: CN Shanghai
- Assignee: SHANGHAI ZHAOXIN SEMICONDUCTOR CO., LTD.
- Current Assignee: SHANGHAI ZHAOXIN SEMICONDUCTOR CO., LTD.
- Current Assignee Address: CN Shanghai
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G06F12/0862
- IPC: G06F12/0862 ; G06F12/0882

Abstract:
An electronic device is provided. The electronic device includes a memory and an integrated circuit. The integrated circuit includes an address remapping unit. The memory includes multiple memory pages. The integrated circuit converts multiple virtual addresses into multiple physical addresses in sequence. The address remapping unit prefetches a first physical address corresponding to a first virtual address if a second virtual address exceeds a preset offset. The first virtual address is in a different memory page from the second virtual address. The second virtual address is currently processed. The multiple virtual addresses include the first and second virtual addresses.
Public/Granted literature
- US20230128405A1 ELECTRONIC DEVICE AND METHOD FOR ACCELERATING MEMORY ACCESS Public/Granted day:2023-04-27
Information query
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