Invention Grant
- Patent Title: Memory device and operation method thereof
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Application No.: US17375024Application Date: 2021-07-14
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Publication No.: US12106070B2Publication Date: 2024-10-01
- Inventor: Han-Wen Hu , Yung-Chun Lee , Bo-Rong Lin , Huai-Mu Wang
- Applicant: MACRONIX INTERNATIONAL CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: G06J1/00
- IPC: G06J1/00 ; G06F7/544

Abstract:
A memory device and an operation method thereof are provided. The memory device includes: a memory array including a plurality of memory cells for storing a plurality of weights; a multiplication circuit for performing bitwise multiplication on a plurality of input data and the weights to generate a plurality of multiplication results, wherein in performing bitwise multiplication, the memory cells generate a plurality of memory cell currents; a digital accumulating circuit for performing a digital accumulating on the multiplication results; an analog accumulating circuit for performing an analog accumulating on the memory cell currents to generate a first MAC operation result; and a decision unit for deciding whether to perform the analog accumulating, the digital accumulating or a hybrid accumulating, wherein in performing the hybrid accumulating, whether the digital accumulating circuit is triggered is based on the first MAC operation result.
Public/Granted literature
- US20220075600A1 MEMORY DEVICE AND OPERATION METHOD THEREOF Public/Granted day:2022-03-10
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