Invention Grant
- Patent Title: Method for forming fin field effect transistor device structure
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Application No.: US18357815Application Date: 2023-07-24
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Publication No.: US12107012B2Publication Date: 2024-10-01
- Inventor: Shang-Wen Chang , Yi-Hsiung Lin , Yi-Hsun Chiu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- The original application number of the division: US17870182 2022.07.21
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/768 ; H01L27/088 ; H01L29/66 ; H01L29/78
Abstract:
A method for forming a fin field effect transistor device structure is provided. The method includes forming a first spacer layer over a first fin structure and a second fin structure. The method also includes forming a power rail between the first fin structure and the second fin structure. The method further includes forming a second spacer layer over the first spacer layer and the power rail. In addition, the method includes forming a fin isolation structure over the power rail between the first fin structure and the second fin structure. The method also includes forming an epitaxial structure over the first fin structure and the second fin structure. The method further includes forming an inter-layer dielectric structure covering the epitaxial structure. In addition, the method includes forming an opening exposing the epitaxial structure, the power rail and the fin isolation structure. The method also includes filling the opening with a first contact structure.
Public/Granted literature
- US20230369121A1 METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR DEVICE STRUCTURE Public/Granted day:2023-11-16
Information query
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