Invention Grant
- Patent Title: Semiconductor devices and methods of manufacturing thereof
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Application No.: US17166558Application Date: 2021-02-03
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Publication No.: US12107013B2Publication Date: 2024-10-01
- Inventor: Shih-Yao Lin , Chih-Han Lin , Shu-Yuan Ku , Shu-Uei Jang , Ya-Yi Tsai , I-Wei Yang
- Applicant: Taiwan Semicondutor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee Address: TW Hsinchu
- Agency: FOLEY & LARDNER LLP
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/088
Abstract:
A semiconductor device includes a first semiconductor fin extending along a first direction. The semiconductor device includes a second semiconductor fin also extending along the first direction. The semiconductor device includes a dielectric structure disposed between the first and second semiconductor fins. The semiconductor device includes a gate isolation structure vertically disposed above the dielectric structure. The semiconductor device includes a metal gate layer extending along a second direction perpendicular to the first direction, wherein the metal gate layer includes a first portion straddling the first semiconductor fin and a second portion straddling the second semiconductor fin. The gate isolation structure separates the first and second portions of the metal gate layer from each other and includes a bottom portion extending into the dielectric structure.
Public/Granted literature
- US20210335674A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF Public/Granted day:2021-10-28
Information query
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