Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17580683Application Date: 2022-01-21
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Publication No.: US12107025B2Publication Date: 2024-10-01
- Inventor: Yohei Yamaguchi , Tomoyuki Ashimine , Yasuhiro Murase
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Nagaokakyo
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Nagaokakyo
- Agency: ArentFox Schiff LLP
- Priority: JP 19171533 2019.09.20
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01G4/224 ; H01G4/33 ; H01L49/02 ; H01G4/12 ; H01G4/30

Abstract:
A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface; a dielectric film on the first main surface, the dielectric film having an electrode layer disposing portion and a protective layer covering portion, and a thickness of the protective layer covering portion in a first outer peripheral end of the dielectric film is smaller than a thickness of the electrode layer disposing portion; a first electrode layer on the electrode layer disposing portion; a first protective layer covering a second outer peripheral end of the first electrode layer and at least a part of the protective layer covering portion; and a second protective layer covering the first protective layer, wherein the first protective layer has a relative permittivity lower than that of the second protective layer, and the second protective layer has moisture resistance higher than that of the first protective layer.
Public/Granted literature
- US20220139795A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-05-05
Information query
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