Invention Grant
- Patent Title: Fin-based and bipolar electrostatic discharge devices
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Application No.: US18462779Application Date: 2023-09-07
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Publication No.: US12107083B2Publication Date: 2024-10-01
- Inventor: Robert J. Gauthier, Jr. , Meng Miao , Alain F. Loiseau , Souvick Mitra , You Li , Wei Liang
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee: GLOBALFOUNDRIES U.S. Inc.
- Current Assignee Address: US NY Malta
- Agency: Calderon Safran & Wright P.C.
- Agent Anthony Canale; Andrew M. Calderon
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L21/8222 ; H01L21/84 ; H01L27/12
Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge (ESD) devices and methods of manufacture. The structure (ESD device) includes: a bipolar transistor comprising a collector region, an emitter region and a base region; and a lateral ballasting resistance comprising semiconductor material adjacent to the collector region.
Public/Granted literature
- US20230420447A1 FIN-BASED AND BIPOLAR ELECTROSTATIC DISCHARGE DEVICES Public/Granted day:2023-12-28
Information query
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