Invention Grant
- Patent Title: Electroless plating method for metal gate fill
-
Application No.: US18324442Application Date: 2023-05-26
-
Publication No.: US12107150B2Publication Date: 2024-10-01
- Inventor: Hsin-Yi Lee , Chi On Chui
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; C23C18/16 ; H01L21/8238 ; H01L29/06 ; H01L29/40 ; H01L29/423
Abstract:
Embodiments utilize an electro-chemical process to deposit a metal gate electrode in a gate opening in a gate replacement process for a nanosheet FinFET device. Accelerators and suppressors may be used to achieve a bottom-up deposition for a fill material of the metal gate electrode.
Public/Granted literature
- US20230299177A1 Electroless Plating Method for Metal Gate Fill Public/Granted day:2023-09-21
Information query
IPC分类:
