Invention Grant
- Patent Title: Co/Cu selective wet etchant
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Application No.: US17756223Application Date: 2020-09-30
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Publication No.: US12110436B2Publication Date: 2024-10-08
- Inventor: Chung-Yi Chang , Wen Dar Liu , Yi-Chia Lee
- Applicant: Versum Materials US, LLC
- Applicant Address: US AZ Tempe
- Assignee: Versum Materials US, LLC
- Current Assignee: Versum Materials US, LLC
- Current Assignee Address: US AZ Tempe
- Agent William T. Slaven, IV
- International Application: PCT/US2020/053434 2020.09.30
- International Announcement: WO2021/126340A 2021.06.24
- Date entered country: 2022-05-19
- Main IPC: C09K13/08
- IPC: C09K13/08 ; C09K13/06 ; H01L21/3213

Abstract:
The disclosed and claimed subject matter relates to wet etchants exhibiting high copper and cobalt etching rates where the etching rate ratio between the two metals can be varied. The wet etchants have a composition comprising a formulation consisting of: at least one alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent with the amino and hydroxyl substituents attached to two different carbon atoms; at least one pH adjuster for adjusting the pH of the formulation to between approximately 9 and approximately 12; at least one chelating agent; and water.
Public/Granted literature
- US20230002675A1 CO/CU Selective Wet Etchant Public/Granted day:2023-01-05
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