Invention Grant
- Patent Title: Etching method, substrate processing apparatus, and substrate processing system
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Application No.: US17160780Application Date: 2021-01-28
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Publication No.: US12112954B2Publication Date: 2024-10-08
- Inventor: Maju Tomura , Tomohiko Niizeki , Takayuki Katsunuma , Hironari Sasagawa , Yuta Nakane , Shinya Ishikawa , Kenta Ono , Sho Kumakura , Yusuke Takino , Masanobu Honda
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: XSENSUS LLP
- Priority: JP 20012240 2020.01.29 JP 20101012 2020.06.10
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/3205 ; H01L21/3213
Abstract:
An etching method includes forming a film on a surface of a substrate having a region to be etched and a mask. The mask is provided on the region and includes an opening that partially exposes the region. The film is made of the same material as that of the region. The etching method further includes etching the region.
Public/Granted literature
- US20210233778A1 ETCHING METHOD, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING SYSTEM Public/Granted day:2021-07-29
Information query
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