Invention Grant
- Patent Title: Film formation apparatus, film formation method, and method for fabricating semiconductor device
-
Application No.: US17462366Application Date: 2021-08-31
-
Publication No.: US12112955B2Publication Date: 2024-10-08
- Inventor: Yusuke Kondo , Soichi Yamazaki
- Applicant: KIOXIA CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP 21044839 2021.03.18
- Main IPC: H01L23/00
- IPC: H01L23/00 ; C23C14/04 ; C23C14/06 ; C23C14/34 ; H01J37/32 ; H01L21/311 ; H10B69/00
Abstract:
A film forming apparatus includes an electrode, a target holder configured to hold a film forming target so as to face the electrode, and a masking shield holder configured to hold a masking shield between the electrode and the target holder. The masking shield includes a lattice portion having a plurality of openings therein and a frame portion supporting the lattice portion.
Public/Granted literature
- US20220301884A1 FILM FORMATION APPARATUS, FILM FORMATION METHOD, AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2022-09-22
Information query
IPC分类:
