Invention Grant
- Patent Title: Semiconductor device
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Application No.: US17607359Application Date: 2019-08-27
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Publication No.: US12113040B2Publication Date: 2024-10-08
- Inventor: Tomoyuki Asada , Eri Fukuda , Daisuke Tsunami
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2019/033462 2019.08.27
- International Announcement: WO2021/038712A 2021.03.04
- Date entered country: 2021-10-28
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
A semiconductor device according to the invention of the present application includes a support, a semiconductor chip provided on the support and a die bond material for bonding a back surface of the semiconductor chip to the support, wherein a plurality of cutouts is formed at edges formed between the back surface and side surfaces of the semiconductor chip connected to the back surface, and the die bond material is provided integrally over the plurality of cutouts.
Public/Granted literature
- US20220223558A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-07-14
Information query
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