Invention Grant
- Patent Title: Semiconductor device with sense terminal
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Application No.: US17717756Application Date: 2022-04-11
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Publication No.: US12113041B2Publication Date: 2024-10-08
- Inventor: Noriko Okunishi , Toshiyuki Hata
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Rimon P.C.
- Priority: JP 21093167 2021.06.02
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/495 ; H01L29/747 ; H01L29/78 ; H02K11/33 ; H02M7/00
Abstract:
In order to reduce on-resistance in a semiconductor device to be used for high current applications, the semiconductor device includes a source terminal lead located between a gate terminal lead and a Kelvin terminal lead in plan view and electrically connected with a source terminal via a plurality of wires.
Public/Granted literature
- US20220392865A1 SEMICONDUCTOR DEVICE Public/Granted day:2022-12-08
Information query
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