Invention Grant
- Patent Title: Metal bonding structure and manufacturing method thereof
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Application No.: US17450104Application Date: 2021-10-06
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Publication No.: US12113042B2Publication Date: 2024-10-08
- Inventor: Chun-Liang Lu , Wei-Lin Chen , Chun-Hao Chou , Kuo-Cheng Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Harrity & Harrity, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00

Abstract:
Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first wafer including a first metal structure within a body of the first wafer. The semiconductor structure also includes a second wafer including a second metal structure within a body of the second wafer, where the first wafer is coupled to the second wafer at an interface. The semiconductor structure further includes a metal bonding structure coupled to the first metal structure and the second metal structure and extending through the interface.
Public/Granted literature
- US20220310550A1 METAL BONDING STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-09-29
Information query
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