Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US17720711Application Date: 2022-04-14
-
Publication No.: US12113105B2Publication Date: 2024-10-08
- Inventor: Nao Nagata
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Rimon P.C.
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/06 ; H01L29/10 ; H01L29/739
Abstract:
A semiconductor device includes first and second active cell regions and an inactive cell region between the first and second active cell regions, wherein each of the first and second active cell regions comprises: a trench gate; a first trench emitter; a first hole barrier layer of a first conductivity type formed between the trench gate and the first trench emitter; a base layer of a second conductivity type formed on upper portion of the first hole barrier layer; an emitter layer of the first conductivity type formed on upper portion of the base layer; a latch-up prevention layer of the second conductivity type formed on upper portion of the first hole barrier layer, wherein the inactive cell region comprises: a second trench emitter; a first floating layer of the second conductivity type formed between the trench gate of the first active cell region and the second trench emitter.
Public/Granted literature
- US20230335590A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-10-19
Information query
IPC分类:
