Invention Grant
- Patent Title: Transistor with ohmic contacts
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Application No.: US17508846Application Date: 2021-10-22
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Publication No.: US12113114B2Publication Date: 2024-10-08
- Inventor: Kyle Bothe , Evan Jones
- Applicant: Wolfspeed, Inc.
- Applicant Address: US NC Durham
- Assignee: WOLFSPEED, INC.
- Current Assignee: WOLFSPEED, INC.
- Current Assignee Address: US NC Durham
- Agency: Sage Patent Group
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/45
Abstract:
A transistor includes a semiconductor layer and a channel region. The transistor further includes a first doped contact region in the semiconductor layer and adjacent the channel region. The transistor further includes a first ohmic contact including an interface region comprising a first interface length between the first ohmic contact and the first doped contact region larger than a length of the interface region.
Public/Granted literature
- US20230130614A1 TRANSISTOR WITH OHMIC CONTACTS Public/Granted day:2023-04-27
Information query
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