Invention Grant
- Patent Title: Uniform implant regions in a semiconductor ridge of a FinfET
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Application No.: US17887703Application Date: 2022-08-15
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Publication No.: US12113121B2Publication Date: 2024-10-08
- Inventor: Ming-Yeh Chuang
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Frank D. Cimino
- The original application number of the division: US17138647 2020.12.30
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/265 ; H01L29/10 ; H01L29/78
Abstract:
A method for fabricating an integrated circuit is disclosed. The method comprises forming a semiconductor ridge over a semiconductor surface of a substrate and forming an implant screen on a top and sidewalls of the semiconductor ridge. The implant screen is at least two times thicker on the top of the semiconductor ridge relative to the sidewalls of the semiconductor ridge. The method further comprises implanting a dopant into the top and sidewalls of the semiconductor ridge.
Public/Granted literature
- US20220393021A1 UNIFORM IMPLANT REGIONS IN A SEMICONDUCTOR RIDGE OF A FINFET Public/Granted day:2022-12-08
Information query
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