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US12113129B2 Semiconductor device, array structure of semiconductor devices, neuromorphic circuit including the semiconductor devices, and computing apparatus including the neuromorphic circuit 有权

Semiconductor device, array structure of semiconductor devices, neuromorphic circuit including the semiconductor devices, and computing apparatus including the neuromorphic circuit
Abstract:
A semiconductor device includes a semiconductor layer extending in a first direction and including a source region and a drain region, which are apart from each other in the first direction; an insulating layer surrounding the semiconductor layer; a first gate electrode layer surrounding the insulating layer; a ferroelectric layer provided on the first gate electrode layer; and a second gate electrode layer provided on the ferroelectric layer.
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