Invention Grant
- Patent Title: Dual emission LED chip
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Application No.: US17419623Application Date: 2019-12-31
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Publication No.: US12113159B2Publication Date: 2024-10-08
- Inventor: Du Jin Park , Pil Kuk Jang
- Applicant: NANO-X
- Applicant Address: KR Osan-si
- Assignee: NANO-X
- Current Assignee: NANO-X
- Current Assignee Address: KR Osan-si
- Agency: NKL Law
- Agent Jae Youn Kim
- Priority: KR 20180174265 2018.12.31 KR 20190001089 2019.01.04
- International Application: PCT/KR2019/018807 2019.12.31
- International Announcement: WO2020/141861A 2020.07.09
- Date entered country: 2021-06-29
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L33/00 ; H01L33/24 ; H01L33/08 ; H01L33/32 ; H01L33/38 ; H01L33/44

Abstract:
Proposed is a dual emission LED chip that emits light to the upper and lower sides of a PN junction, wherein the duel emission LED chip uses the electroluminescent effect of the PN junction including a P layer and an N layer provided below the P layer, and characterized in that the dual emission LED chip emits light in the upward direction of the P layer and the downward direction of the N layer. The dual emission chip can be applied as a single chip to a field requiring dual emission, thereby enabling miniaturization of applied equipment, and increases power efficiency, thereby reducing manufacturing costs. In addition, as the dual emission LED chip can be manufactured through a batch process, a separate packaging process is not required.
Public/Granted literature
- US20220085262A1 DUAL EMISSION LED CHIP Public/Granted day:2022-03-17
Information query
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