• Patent Title: Dual emission LED chip
  • Application No.: US17419623
    Application Date: 2019-12-31
  • Publication No.: US12113159B2
    Publication Date: 2024-10-08
  • Inventor: Du Jin ParkPil Kuk Jang
  • Applicant: NANO-X
  • Applicant Address: KR Osan-si
  • Assignee: NANO-X
  • Current Assignee: NANO-X
  • Current Assignee Address: KR Osan-si
  • Agency: NKL Law
  • Agent Jae Youn Kim
  • Priority: KR 20180174265 2018.12.31 KR 20190001089 2019.01.04
  • International Application: PCT/KR2019/018807 2019.12.31
  • International Announcement: WO2020/141861A 2020.07.09
  • Date entered country: 2021-06-29
  • Main IPC: H01L33/62
  • IPC: H01L33/62 H01L33/00 H01L33/24 H01L33/08 H01L33/32 H01L33/38 H01L33/44
Dual emission LED chip
Abstract:
Proposed is a dual emission LED chip that emits light to the upper and lower sides of a PN junction, wherein the duel emission LED chip uses the electroluminescent effect of the PN junction including a P layer and an N layer provided below the P layer, and characterized in that the dual emission LED chip emits light in the upward direction of the P layer and the downward direction of the N layer. The dual emission chip can be applied as a single chip to a field requiring dual emission, thereby enabling miniaturization of applied equipment, and increases power efficiency, thereby reducing manufacturing costs. In addition, as the dual emission LED chip can be manufactured through a batch process, a separate packaging process is not required.
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