A semiconductor device having a plurality of layers deposited on a substrate and extending in at least one lateral aspect defined by a lateral axis thereof comprises at least one EM radiation-absorbing layer deposited on a first layer surface and comprising a discontinuous layer of at least one particle structure comprising a deposited material. The at least one particle structure of the at least one EM radiation-absorbing layer facilitates absorption of EM radiation therein in at least a part of at least one of a visible spectrum and a UV spectrum while substantially allowing transmission of EM radiation therein in at least a part of at least one of an IR and an NIR spectrum.