Invention Grant
- Patent Title: Dual gain column structure for column power area efficiency
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Application No.: US18171227Application Date: 2023-02-17
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Publication No.: US12114092B2Publication Date: 2024-10-08
- Inventor: Rui Wang , Hiroaki Ebihara
- Applicant: OMNIVISION TECHNOLOGIES, INC.
- Applicant Address: US CA Santa Clara
- Assignee: OMNIVISION TECHNOLOGIES, INC.
- Current Assignee: OMNIVISION TECHNOLOGIES, INC.
- Current Assignee Address: US CA Snata Clara
- Agency: Perkins Coie LLP
- Main IPC: H04N25/78
- IPC: H04N25/78 ; H04N25/77

Abstract:
A pixel cell readout circuit comprises a comparator with a current mirror having first and second current paths, a first input transistor coupled to the first current path, a low conversion gain (LCG) second input transistor selectively coupled to the second current path, and a high conversion gain (HCG) second input transistor selectively coupled to the second current path. The pixel cell readout circuit further comprises a gain network coupled between a gate node of the first input transistor and a ramp generator output, wherein the gain network is configured to provide a variable comparator gain to the comparator, an LCG auto-zero switch coupled between a drain node and a gate node of the LCG second input transistor, and an HCG auto-zero switch coupled between a drain node and a gate node of the HCG second input transistor.
Public/Granted literature
- US20240284074A1 DUAL GAIN COLUMN STRUCTURE FOR COLUMN POWER AREA EFFICIENCY Public/Granted day:2024-08-22
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