Invention Grant
- Patent Title: SOT MRAM having dielectric interfacial layer and method forming same
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Application No.: US17809928Application Date: 2022-06-30
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Publication No.: US12114510B2Publication Date: 2024-10-08
- Inventor: Wilman Tsai , MingYuan Song , Shy-Jay Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US16806203 2020.03.02
- Main IPC: H10B61/00
- IPC: H10B61/00 ; G11C11/16 ; H10N50/01 ; H10N50/80
Abstract:
A device includes a spin orbit coupling layer and a Magnetic Tunnel Junction (MTJ) stack. The MTJ stack includes a dielectric layer over the spin orbit coupling layer, a free layer over the dielectric layer, a tunnel barrier layer over the free laver, and a reference layer over the tunnel barrier layer. The spin orbit coupling layer extends beyond edges of the MTJ stack in a first direction and a second direction opposite to the first direction.
Public/Granted literature
- US20220328559A1 SOT MRAM Having Dielectric Interfacial Layer and Method Forming Same Public/Granted day:2022-10-13
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