A display device (1) includes: a substrate (2); and a first transistor (1a) formed on the substrate (2). The first transistor (1a) includes: an oxide semiconductor layer (4) formed on the substrate (2); a gate insulating layer (5) formed on the oxide semiconductor layer (4); and a gate electrode (6) formed on the gate insulating layer (5). The oxide semiconductor layer (4) includes: a conductive region (4a) provided with conductivity; a first resistance region (4b) positioned below the gate electrode (6); and a second resistance region (4c) provided between the conductive region (4a) and the first resistance region (4b), and positioned outside the gate electrode (6). The first resistance (4b) is larger in resistance than the second resistance region (4c).