In general, according to one embodiment, a magnetoresistance memory device includes: a first conductor; a second conductor on the first conductor; a first element on the second conductor; a third conductor on the first element; and a first layer stack on the third conductor. The second conductor is amorphous. The first element includes a silicon oxide introduced with a dopant. The first layer stack includes a first magnetic layer, a second magnetic layer, and a first insulating layer between the first magnetic layer and the second magnetic layer.