Invention Grant
- Patent Title: Method for identifying cause of manufacturing defects
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Application No.: US17678184Application Date: 2022-02-23
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Publication No.: US12118709B2Publication Date: 2024-10-15
- Inventor: Ken-Huan Ho
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: G06T7/00
- IPC: G06T7/00

Abstract:
A method for identifying a cause of manufacturing defects is provided. The method includes capturing, by an image capture unit, a number N of images from a semiconductor wafer, wherein each of the s umber N of images comprises a number M of geometric features, calculating, by a processing unit, a geometric center for each of the geometric features of the number N of images, calculating, based on the number N of images, a number M of average geometric centers associated with the number M of geometric features, and calculating a shift amount for each geometric feature of the number N of images.
Public/Granted literature
- US20230267595A1 METHOD FOR IDENTIFYING CAUSE OF MANUFACTURING DEFECTS Public/Granted day:2023-08-24
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