Invention Grant
- Patent Title: Three-dimensional flash memory having improved degree of integration, and manufacturing method therefor
-
Application No.: US17432473Application Date: 2020-01-28
-
Publication No.: US12120872B2Publication Date: 2024-10-15
- Inventor: Yunheub Song
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20190022149 2019.02.26 KR 20190022150 2019.02.26
- International Application: PCT/KR2020/001274 2020.01.28
- International Announcement: WO2020/175805A 2020.09.03
- Date entered country: 2021-08-19
- Main IPC: H10B43/27
- IPC: H10B43/27 ; H10B41/27

Abstract:
Provided are a 3-dimensional (3D) flash memory with an improved degree of integration and a method of manufacturing the same. The 3D flash memory may include at least one vertical string formed to extend in one direction on a substrate and comprising a channel layer formed to extend in the one direction and a charge storage layer formed to extend in the one direction so as to surround the channel layer; a plurality of electrode layers stacked to be vertically connected to the at least one vertical string; and a source line formed to be buried in the substrate.
Public/Granted literature
- US20220139953A1 THREE-DIMENSIONAL FLASH MEMORY HAVING IMPROVED DEGREE OF INTEGRATION, AND MANUFACTURING METHOD THEREFOR Public/Granted day:2022-05-05
Information query