Invention Grant
- Patent Title: Light emitting device comprising perovskite charge transport layer and manufacturing method thereof
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Application No.: US17252268Application Date: 2019-06-14
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Publication No.: US12120899B2Publication Date: 2024-10-15
- Inventor: Tae-Woo Lee , Young-Hoon Kim , Himchan Cho
- Applicant: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
- Applicant Address: KR Seoul
- Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
- Current Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR 20180068303 2018.06.14
- International Application: PCT/KR2019/007234 2019.06.14
- International Announcement: WO2019/240546A 2019.12.19
- Date entered country: 2020-12-14
- Main IPC: H10K50/11
- IPC: H10K50/11 ; H10K50/15 ; H10K50/16 ; H10K50/17 ; H10K71/00 ; H10K85/30 ; H10K71/16 ; H10K101/30 ; H10K101/40 ; H10K102/00

Abstract:
Disclosed are a light emitting device including a perovskite charge transport layer and a method of manufacturing the same. Perovskite thin film of the light emitting device is prepared by co-depositing or sequentially depositing perovskite precursors. Perovskite is directly deposited on the substrate, the thickness of the perovskite thin film is easily controlled, and the energy level is easily adjusted. So, a charge transport layer functioning as a hole injection layer or an electron injection layer in the light emitting device may be manufactured to have suitable energy level.
Public/Granted literature
- US20210305529A1 LIGHT EMITTING DEVICE COMPRISING PEROVSKITE CHARGE TRANSPORT LAYER AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-09-30
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