Invention Grant
- Patent Title: Methods for forming trench structures in substrates
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Application No.: US17736182Application Date: 2022-05-04
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Publication No.: US12125714B2Publication Date: 2024-10-22
- Inventor: Taichou Papo Chen
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: MOSER TABOADA
- Priority: WO TUS2022013043 2022.01.20
- Main IPC: H01L21/322
- IPC: H01L21/322

Abstract:
Methods for forming a trench structure with passivated surfaces. In some embodiments, a method of forming a trench structure may include etching a trench into a substrate material of the substrate, forming an oxide layer on surfaces of the trench using a dry oxide process at a temperature of less than approximately 450 degrees Celsius, selectively removing the oxide layer from surfaces of the trench, and forming a passivation layer on surfaces of the trench to form a homogeneous passivation region as part of the substrate material using a low temperature process of less than approximately 450 degrees Celsius.
Public/Granted literature
- US20230230848A1 METHODS FOR FORMING TRENCH STRUCTURES IN SUBSTRATES Public/Granted day:2023-07-20
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