Invention Grant
- Patent Title: Clamping element and method for producing a power semiconductor device
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Application No.: US18564532Application Date: 2022-04-20
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Publication No.: US12125767B2Publication Date: 2024-10-22
- Inventor: Lluis Santolaria , Dominik Truessel , Harald Beyer
- Applicant: HITACHI ENERGY LTD
- Applicant Address: CH Zürich
- Assignee: HITACHI ENERGY LTD
- Current Assignee: HITACHI ENERGY LTD
- Current Assignee Address: CH Zürich
- Agency: Procopio, Cory, Hargreaves & Savitch LLP
- Priority: EP 176571 2021.05.28
- International Application: PCT/EP2022/060370 2022.04.20
- International Announcement: WO2022/248126A 2022.12.01
- Date entered country: 2023-11-27
- Main IPC: H01L23/40
- IPC: H01L23/40 ; H01L21/48

Abstract:
A clamping element (9) is specified configured to be pressed to a baseplate (2) of at least one power semiconductor module (1) comprising a mold (4), comprising —at least one contact area (10) being configured to be in direct contact to at least one clamping area (7) of the baseplate (2) being free of the mold (4), and —at least one recess (11) provided in the baseplate, wherein —the recess (11) and the contact area (10) are configured to face the baseplate. Further, a method for producing a power semiconductor device is specified.
Public/Granted literature
- US20240266250A1 CLAMPING ELEMENT AND METHOD FOR PRODUCING A POWER SEMICONDUCTOR DEVICE Public/Granted day:2024-08-08
Information query
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